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| 2N5962/ MMBT5962 Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C BE TO-92 SOT-23 Mark: 117 B NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 45 45 8.0 100 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5962 625 5.0 83.3 200 Max *MMBT5962 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation 2N5962/ MMBT5962 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 5.0 mA, IB = 0 I C = 10 A, I E = 0 I E = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 65 C VEB = 5.0 V, I C = 0 45 45 8.0 2.0 50 1.0 V V V nA nA nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 10 A VCE = 5.0 V, IC = 100 A VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC = 10 mA IC = 10 mA, IB = 0.5 mA VCE = 5.0 V, IC = 1.0 mA 450 500 550 600 0.5 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage 1400 0.2 0.7 V V SMALL SIGNAL CHARACTERISTICS Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain VCB = 5.0 V VEB = 0.5 V IC = 10 mA, VCE = 5.0 V, f = 1.0 kHz IC = 10 mA, VCE = 5.0 V, f = 100 MHz VCE = 5.0 V, IC = 10 A, RS = 10 k, f = 1.0 kHz, BW = 400 Hz VCE = 5.0 V, IC = 100 A, RS = 1.0 k, f = 1.0 kHz, BW = 400 Hz VCE = 5.0 V, IC = 100 A, RS = 10 k, f = 1.0 kHz, BW = 400 Hz VCE = 5.0 V, IC = 100 A, RS = 100 k, f = 1.0 kHz, BW = 400 Hz VCE = 5.0 V, IC = 10 A, RS = 10 k, f = 10 Hz -10 kHz BW = 15.7 kHz 600 1.0 4.0 6.0 200 pF pF NF Noise Figure 3.0 dB 6.0 dB 4.0 dB 8.0 dB 3.0 dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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